RQA0003DNS fet equivalent, silicon n-channel mos fet.
* High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% (f = 520 MHz)
* Small Outline Package (WSON0303-2: 3.0 × 3.0 × 0.8m.
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